Semiconductor Module

For Detailed Analysis of Semiconductor Devices at the Fundamental Level

Semiconductor Module

Transistor operation where an applied gate voltage turns the device on and then determines the drain saturation current.

MOSFETs, MESFETs, and Schottky Diodes

The Semiconductor Module allows for detailed analysis of semiconductor device operation at the fundamental physics level. The module is based on the drift-diffusion equations, using isothermal or nonisothermal transport models. It is useful for simulating a range of practical devices – including bipolar, metal semiconductor field-effect transistors (MESFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), Schottky diodes, thyristors, and P-N junctions.

Multiphysics effects can often have important influences on semiconductor device performance. Semiconductor processing frequently occurs at high temperatures and, consequently, stresses can be introduced into the materials. Furthermore, high-power devices can generate a significant amount of heat. The Semiconductor Module enables semiconductor device-level modeling on the COMSOL platform, allowing you to easily create customized simulations involving multiple physical effects. Moreover, the software is uniquely transparent, as you are always able to manipulate the model equations, leaving you with complete freedom in the definition of phenomena that are not predefined in the module.

Breakdown in a MOSFET

DC Characteristics of a MOS Transistor (MOSFET)

Caughey-Thomas Mobility in a Semiconductor

Bipolar Transistor

P-N Junction Benchmark Model

P-N Junction Diode with External Circuit

Lombardi Surface Mobility in a Semiconductor

Heterojunction Benchmark

DC Characteristics of a MESFET